MOSFET P-CH 60V 300MA TO236AB
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Not For New Designs |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 300mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 2.5Ohm @ 160mA, 10V |
Vgs(th) (Max) @ Id: | 1V @ 1mA (Min) |
Gate Charge (Qg) (Max) @ Vgs: | 3 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 70 pF @ 48 V |
FET Feature: | - |
Power Dissipation (Max): | 417mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-236AB |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPI60R165CPAKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 21A TO262-3 |
|
TK20G60W,RVQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 600V 20A D2PAK |
|
TK12E80W,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 800V 11.5A TO220 |
|
TPN3300ANH,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 9.4A 8TSON |
|
IXFR26N120PWickmann / Littelfuse |
MOSFET N-CH 1200V 15A ISOPLUS247 |
|
IPD038N06N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 90A TO252-3 |
|
IRFB9N60APBF-BE3Vishay / Siliconix |
MOSFET N-CH 600V 9.2A TO220AB |
|
SIR804DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 60A PPAK SO-8 |
|
2SK3325B-S19-AYRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SI8481DB-T1-E1Vishay / Siliconix |
MOSFET P-CH 20V 9.7A 4MICRO FOOT |
|
IPD60N10S4L12ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 60A TO252-3 |
|
SI7390DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 9A PPAK SO-8 |
|
RM140N150T2Rectron USA |
MOSFET N-CH 150V 140A TO220-3 |