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IPI60R165CPAKSA1

IPI60R165CPAKSA1

MOSFET N-CH 650V 21A TO262-3

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IPI60R165CPAKSA1

IPI60R165CPAKSA1

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Part No :

IPI60R165CPAKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 21A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
156215 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 29 - Oct 03 2024
PDF
IPI60R165CPAKSA1 PDF
Type Description
Series:CoolMOS™
Package:Tube
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:165mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:3.5V @ 790µA
Gate Charge (Qg) (Max) @ Vgs:52 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2000 pF @ 100 V
FET Feature:-
Power Dissipation (Max):192W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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