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IPI60R165CPAKSA1

IPI60R165CPAKSA1

MOSFET N-CH 650V 21A TO262-3

IPI60R165CPAKSA1

IPI60R165CPAKSA1

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Part No :

IPI60R165CPAKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 21A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
156215 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
IPI60R165CPAKSA1 PDF
Type Description
Series:CoolMOS™
Package:Tube
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:165mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:3.5V @ 790µA
Gate Charge (Qg) (Max) @ Vgs:52 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2000 pF @ 100 V
FET Feature:-
Power Dissipation (Max):192W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
IPI60R165CPAKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPI60R165CPAKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPI60R165CPAKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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