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TK12E80W,S1X

TK12E80W,S1X

MOSFET N-CH 800V 11.5A TO220

TK12E80W,S1X

TK12E80W,S1X

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Part No :

TK12E80W,S1X

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 800V 11.5A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10280 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
TK12E80W,S1X PDF
Type Description
Series:DTMOSIV
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:450mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id:4V @ 570µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1400 pF @ 300 V
FET Feature:-
Power Dissipation (Max):165W (Tc)
Operating Temperature:150°C
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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