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IPD60N10S4L12ATMA1

IPD60N10S4L12ATMA1

MOSFET N-CH 100V 60A TO252-3

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IPD60N10S4L12ATMA1

IPD60N10S4L12ATMA1

Image is for reference, please contact us to get the real picture

Part No :

IPD60N10S4L12ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 60A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
256225 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
IPD60N10S4L12ATMA1 PDF
Type Description
Series:Automotive, AEC-Q101, HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:12mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:2.1V @ 46µA
Gate Charge (Qg) (Max) @ Vgs:49 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:3170 pF @ 25 V
FET Feature:-
Power Dissipation (Max):94W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-313
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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