TRANS SJT N-CH 1200V 52A TO247-3
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, CoolSiC™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): | 1200 V |
Current - Continuous Drain (Id) @ 25°C: | 52A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 59mOhm @ 20A, 15V |
Vgs(th) (Max) @ Id: | 5.7V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: | 57 nC @ 15 V |
Vgs (Max): | +20V, -7V |
Input Capacitance (Ciss) (Max) @ Vds: | 2130 pF @ 800 V |
FET Feature: | - |
Power Dissipation (Max): | 228W (Tc) |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO247-3 |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IMBF170R650M1XTMA1IR (Infineon Technologies) |
SICFET N-CH 1700V 7.4A TO263-7 |
|
BSP125L6433HTMA1Rochester Electronics |
MOSFET N-CH 600V 120MA SOT223-4 |
|
FQB46N15TMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
RFD16N05LSM9ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 50V 16A TO252AA |
|
SPI20N65C3XKSA1Rochester Electronics |
MOSFET N-CH 650V 20.7A TO262-3 |
|
RM3010S6Rectron USA |
MOSFET N-CHANNEL 30V 10A SOT23-6 |
|
SI7230DN-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 9A PPAK 1212-8 |
|
TN5335K1-GRoving Networks / Microchip Technology |
MOSFET N-CH 350V 110MA SOT23 |
|
FQAF13N80Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 8A TO3PF |
|
IPSA70R950CEAKMA1Rochester Electronics |
MOSFET N-CH 700V 8.7A TO251-3 |
|
SI7852DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 80V 7.6A PPAK SO-8 |
|
FDMC8010Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 30A/75A POWER33 |
|
BSR92PH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 250V 140MA SC59 |