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AIMW120R045M1XKSA1

AIMW120R045M1XKSA1

TRANS SJT N-CH 1200V 52A TO247-3

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AIMW120R045M1XKSA1

AIMW120R045M1XKSA1

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Part No :

AIMW120R045M1XKSA1

Manufacturer
IR (Infineon Technologies)
Description
TRANS SJT N-CH 1200V 52A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10480 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
Type Description
Series:Automotive, AEC-Q101, CoolSiC™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:52A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:59mOhm @ 20A, 15V
Vgs(th) (Max) @ Id:5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:57 nC @ 15 V
Vgs (Max):+20V, -7V
Input Capacitance (Ciss) (Max) @ Vds:2130 pF @ 800 V
FET Feature:-
Power Dissipation (Max):228W (Tc)
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3
Package / Case:TO-247-3
AIMW120R045M1XKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including AIMW120R045M1XKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for AIMW120R045M1XKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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