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IMBF170R650M1XTMA1

IMBF170R650M1XTMA1

SICFET N-CH 1700V 7.4A TO263-7

IMBF170R650M1XTMA1

IMBF170R650M1XTMA1

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Part No :

IMBF170R650M1XTMA1

Manufacturer
IR (Infineon Technologies)
Description
SICFET N-CH 1700V 7.4A TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10746 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 25 - Sep 29 2024
Type Description
Series:CoolSiC™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1700 V
Current - Continuous Drain (Id) @ 25°C:7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):12V, 15V
Rds On (Max) @ Id, Vgs:650mOhm @ 1.5A, 15V
Vgs(th) (Max) @ Id:5.7V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs:8 nC @ 12 V
Vgs (Max):+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds:422 pF @ 1000 V
FET Feature:-
Power Dissipation (Max):88W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:-
Supplier Device Package:PG-TO263-7
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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