MOSFET N-CH 50V 16A TO252AA
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 50 V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 5V |
Rds On (Max) @ Id, Vgs: | 47mOhm @ 16A, 5V |
Vgs(th) (Max) @ Id: | 2V @ 250mA |
Gate Charge (Qg) (Max) @ Vgs: | 80 nC @ 10 V |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | 60W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252AA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SPI20N65C3XKSA1Rochester Electronics |
MOSFET N-CH 650V 20.7A TO262-3 |
|
RM3010S6Rectron USA |
MOSFET N-CHANNEL 30V 10A SOT23-6 |
|
SI7230DN-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 9A PPAK 1212-8 |
|
TN5335K1-GRoving Networks / Microchip Technology |
MOSFET N-CH 350V 110MA SOT23 |
|
FQAF13N80Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 8A TO3PF |
|
IPSA70R950CEAKMA1Rochester Electronics |
MOSFET N-CH 700V 8.7A TO251-3 |
|
SI7852DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 80V 7.6A PPAK SO-8 |
|
FDMC8010Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 30A/75A POWER33 |
|
BSR92PH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 250V 140MA SC59 |
|
SIA810DJ-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 4.5A PPAK SC70-6 |
|
BSS123WQ-7-FZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 170MA SOT323 |
|
IXTA16N50P-TRLWickmann / Littelfuse |
MOSFET N-CH 500V 16A TO263 |
|
IRFR110PBF-BE3Vishay / Siliconix |
MOSFET N-CH 100V 4.3A DPAK |