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IPSA70R950CEAKMA1

IPSA70R950CEAKMA1

MOSFET N-CH 700V 8.7A TO251-3

IPSA70R950CEAKMA1

IPSA70R950CEAKMA1

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Part No :

IPSA70R950CEAKMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 700V 8.7A TO251-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
143964 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
IPSA70R950CEAKMA1 PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):700 V
Current - Continuous Drain (Id) @ 25°C:8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:950mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:15.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:328 pF @ 100 V
FET Feature:-
Power Dissipation (Max):94W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3-347
Package / Case:TO-251-3 Stub Leads, IPak
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