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FDN302P

FDN302P

MOSFET P-CH 20V 2.4A SUPERSOT3

FDN302P

FDN302P

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Part No :

FDN302P

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET P-CH 20V 2.4A SUPERSOT3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
45862 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 28 - Jan 01 2024
PDF
FDN302P PDF
Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:55mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:882 pF @ 10 V
FET Feature:-
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT-3
Package / Case:TO-236-3, SC-59, SOT-23-3
FDN302P is available at GangBo-ic.com, Please review product page below for detailed information, including FDN302P price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDN302P to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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