MOSFET N-CH 40V PWRDI3333
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 3mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 40.1 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2798 pF @ 20 V |
FET Feature: | - |
Power Dissipation (Max): | 2.62W (Ta), 65.2W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerDI3333-8 |
Package / Case: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
2N7002,235Nexperia |
MOSFET N-CH 60V 300MA TO236AB |
|
SIJ420DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 50A PPAK SO-8 |
|
SI7230DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 9A PPAK 1212-8 |
|
FCH072N60FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 52A TO247-3 |
|
R5007ANXROHM Semiconductor |
MOSFET N-CH 500V 7A TO220FM |
|
AUIRFSL4010-313TRLRochester Electronics |
MOSFET N-CH 100V 180A TO262 |
|
IRFS3307ZTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 120A D2PAK |
|
IRF242Rochester Electronics |
MOSFET N-CH 200V 16A TO3 |
|
IPD30N08S222ATMA1Rochester Electronics |
MOSFET N-CH 75V 30A TO252-3 |
|
HUF75339S3STRochester Electronics |
N-CHANNEL POWER MOSFET |
|
STB80N20M5STMicroelectronics |
MOSFET N-CH 200V 61A D2PAK |
|
NTMFS4C09NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 9A 5DFN |
|
BSC017N04NSGATMA1Rochester Electronics |
MOSFET N-CH 40V 30A/100A TDSON |