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FDD850N10LD

FDD850N10LD

MOSFET N-CH 100V 15.3A TO252-4

FDD850N10LD

FDD850N10LD

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Part No :

FDD850N10LD

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 100V 15.3A TO252-4
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14918 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
FDD850N10LD PDF
Type Description
Series:PowerTrench®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:15.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:75mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:28.9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1465 pF @ 25 V
FET Feature:-
Power Dissipation (Max):42W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252-4
Package / Case:TO-252-5, DPak (4 Leads + Tab), TO-252AD
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