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SI3443BDV-T1-BE3

SI3443BDV-T1-BE3

MOSFET P-CH 20V 3.6A 6TSOP

SI3443BDV-T1-BE3

SI3443BDV-T1-BE3

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Part No :

SI3443BDV-T1-BE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 20V 3.6A 6TSOP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 06 - Nov 10 2024
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:60mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id:1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):1.1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SOT-23-6 Thin, TSOT-23-6
SI3443BDV-T1-BE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SI3443BDV-T1-BE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SI3443BDV-T1-BE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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