Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
FET Type: | - |
Technology: | - |
Drain to Source Voltage (Vdss): | - |
Current - Continuous Drain (Id) @ 25°C: | - |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | - |
Supplier Device Package: | - |
Package / Case: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BUK9628-100A,118Nexperia |
MOSFET N-CH 100V 49A D2PAK |
|
NTD3055L170T4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 9A DPAK |
|
AUIRLL024NTR-IRRochester Electronics |
AUTOMOTIVE POWER MOSFET |
|
IPB120N06S402ATMA2IR (Infineon Technologies) |
MOSFET N-CH 60V 120A TO263-3 |
|
RW1C020UNT2RROHM Semiconductor |
MOSFET N-CH 20V 2A 6WEMT |
|
IRFR210TRPBF-BE3Vishay / Siliconix |
MOSFET N-CH 200V 2.6A DPAK |
|
FQP19N20LRochester Electronics |
MOSFET N-CH 200V 21A TO220-3 |
|
TSM70N900CI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 700V 4.5A ITO220AB |
|
IRFR9120Rochester Electronics |
MOSFET P-CH 100V 5.6A DPAK |
|
SI7172DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 200V 25A PPAK SO-8 |
|
FDH210N08Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 75V TO247-3 |
|
STL42P4LLF6STMicroelectronics |
MOSFET P-CH 40V 42A POWERFLAT |
|
FQI5N60CTURochester Electronics |
MOSFET N-CH 600V 4.5A I2PAK |