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RW1C020UNT2R

RW1C020UNT2R

MOSFET N-CH 20V 2A 6WEMT

RW1C020UNT2R

RW1C020UNT2R

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Part No :

RW1C020UNT2R

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 20V 2A 6WEMT
Catalog
Transistors - FETs, MOSFETs - Single
Availability
845184 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 25 - Sep 29 2024
PDF
RW1C020UNT2R PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:105mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:2 nC @ 4.5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:180 pF @ 10 V
FET Feature:-
Power Dissipation (Max):400mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-WEMT
Package / Case:SOT-563, SOT-666
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