CAP CER 0.15UF 50V X7R 1210
MOSFET N-CH 900V 9A ITO220AB
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 900 V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.4Ohm @ 4.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 72 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 2470 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 89W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | ITO-220AB |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
MCH3375-TL-HRochester Electronics |
MOSFET P-CH 30V 1.6A SC70 |
|
BSH205G2235Rochester Electronics |
P-CHANNEL MOSFET |
|
BUK9628-100A,118Nexperia |
MOSFET N-CH 100V 49A D2PAK |
|
NTD3055L170T4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 9A DPAK |
|
AUIRLL024NTR-IRRochester Electronics |
AUTOMOTIVE POWER MOSFET |
|
IPB120N06S402ATMA2IR (Infineon Technologies) |
MOSFET N-CH 60V 120A TO263-3 |
|
RW1C020UNT2RROHM Semiconductor |
MOSFET N-CH 20V 2A 6WEMT |
|
IRFR210TRPBF-BE3Vishay / Siliconix |
MOSFET N-CH 200V 2.6A DPAK |
|
FQP19N20LRochester Electronics |
MOSFET N-CH 200V 21A TO220-3 |
|
TSM70N900CI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 700V 4.5A ITO220AB |
|
IRFR9120Rochester Electronics |
MOSFET P-CH 100V 5.6A DPAK |
|
SI7172DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 200V 25A PPAK SO-8 |
|
FDH210N08Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 75V TO247-3 |