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RHU002N06T106

RHU002N06T106

MOSFET N-CH 60V 200MA UMT3

RHU002N06T106

RHU002N06T106

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Part No :

RHU002N06T106

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 60V 200MA UMT3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
115011 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 25 - Sep 29 2024
PDF
RHU002N06T106 PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:2.4Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:4.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:15 pF @ 10 V
FET Feature:-
Power Dissipation (Max):200mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:UMT3
Package / Case:SC-70, SOT-323
RHU002N06T106 is available at GangBo-ic.com, Please review product page below for detailed information, including RHU002N06T106 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RHU002N06T106 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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