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NVD6415ANLT4G

NVD6415ANLT4G

23A, 100V, 0.056OHM, N-CHANNEL,

NVD6415ANLT4G

NVD6415ANLT4G

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Part No :

NVD6415ANLT4G

Manufacturer
Rochester Electronics
Description
23A, 100V, 0.056OHM, N-CHANNEL,
Catalog
Transistors - FETs, MOSFETs - Single
Availability
17279 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:23A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:52mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.024 pF @ 25 V
FET Feature:-
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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