MOSFET N-CH 450V 1.8A IPAK
Type | Description |
---|---|
Series: | SuperMESH3™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 450 V |
Current - Continuous Drain (Id) @ 25°C: | 1.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 3.8Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: | 6 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 150 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 27W (Tc) |
Operating Temperature: | - |
Mounting Type: | Through Hole |
Supplier Device Package: | I-PAK |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FDB0300N1007LRochester Electronics |
MOSFET N-CH 100V 200A TO263-7 |
|
BUK9520-55A,127Rochester Electronics |
MOSFET N-CH 55V 54A TO220AB |
|
BUK9Y7R2-60E,115Nexperia |
MOSFET N-CH 60V 100A LFPAK56 |
|
IXFH150N30X3Wickmann / Littelfuse |
MOSFET N-CH 300V 150A TO247 |
|
NVMFS4C01NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 49A/319A 5DFN |
|
SIHB21N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 21A TO263AB |
|
DMN30H4D0L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 300V 250MA SOT23 |
|
STD2NK100ZSTMicroelectronics |
MOSFET N-CH 1000V 1.85A DPAK |
|
IPW60R125P6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 30A TO247-3 |
|
UJ3C120070K3SUnitedSiC |
SICFET N-CH 1200V 34.5A TO247-3 |
|
IPW60R190C6FKSA1Rochester Electronics |
IPW60R190 - 600V COOLMOS N-CHANN |
|
TPCA8065-H,LQ(SToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 16A 8SOP |
|
VP0808L-GRoving Networks / Microchip Technology |
MOSFET P-CH 80V 280MA TO92-3 |