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IPW60R125P6XKSA1

IPW60R125P6XKSA1

MOSFET N-CH 600V 30A TO247-3

IPW60R125P6XKSA1

IPW60R125P6XKSA1

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Part No :

IPW60R125P6XKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 600V 30A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
245024 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
IPW60R125P6XKSA1 PDF
Type Description
Series:CoolMOS™ P6
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:125mOhm @ 11.6A, 10V
Vgs(th) (Max) @ Id:4.5V @ 960µA
Gate Charge (Qg) (Max) @ Vgs:56 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2660 pF @ 100 V
FET Feature:-
Power Dissipation (Max):219W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3
Package / Case:TO-247-3
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