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IPD530N15N3GATMA1

IPD530N15N3GATMA1

MOSFET N-CH 150V 21A TO252-3

HMC-APH634-WP

HMC-APH634-WP

IC RF AMPLIFIER

IPD530N15N3GATMA1

IPD530N15N3GATMA1

Image is for reference, please contact us to get the real picture

Part No :

IPD530N15N3GATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 150V 21A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10227 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 26 - Mar 02 2025
PDF
IPD530N15N3GATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V, 10V
Rds On (Max) @ Id, Vgs:53mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:4V @ 35µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:887 pF @ 75 V
FET Feature:-
Power Dissipation (Max):68W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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