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IPT111N20NFDATMA1

IPT111N20NFDATMA1

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IPT111N20NFDATMA1

IPT111N20NFDATMA1

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Part No :

IPT111N20NFDATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 200V 96A 8HSOF
Catalog
Transistors - FETs, MOSFETs - Single
Availability
17017 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
IPT111N20NFDATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:96A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11.1mOhm @ 96A, 10V
Vgs(th) (Max) @ Id:4V @ 267µA
Gate Charge (Qg) (Max) @ Vgs:87 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7000 pF @ 100 V
FET Feature:-
Power Dissipation (Max):375W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-HSOF-8-1
Package / Case:8-PowerSFN
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