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FDMS86263P

FDMS86263P

MOSFET P-CH 150V 4.4A/22A 8PQFN

FDMS86263P

FDMS86263P

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Part No :

FDMS86263P

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET P-CH 150V 4.4A/22A 8PQFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
684768 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 26 - Dec 30 2024
PDF
FDMS86263P PDF
Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:4.4A (Ta), 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:53mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:3905 pF @ 75 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
FDMS86263P is available at GangBo-ic.com, Please review product page below for detailed information, including FDMS86263P price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDMS86263P to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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