MOSFET N-CH 650V 6.8A TO220SIS
Type | Description |
---|---|
Series: | DTMOSIV |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 6.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 780mOhm @ 3.4A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 15 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 490 pF @ 300 V |
FET Feature: | - |
Power Dissipation (Max): | 30W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220SIS |
Package / Case: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRFF9122Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
RTF015P02TLROHM Semiconductor |
MOSFET P-CH 20V 1.5A TUMT3 |
|
FDMS86263PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 150V 4.4A/22A 8PQFN |
|
STO67N60DM6STMicroelectronics |
MOSFET N-CH 600V 33A TOLL |
|
BSC160N10NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 8.8A/42A TDSON |
|
STD6N62K3STMicroelectronics |
MOSFET N-CH 620V 5.5A DPAK |
|
DN3545N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 450V 136MA TO92 |
|
NVMFS4C05NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 24.7A/116A 5DFN |
|
SFR9214TMRochester Electronics |
P-CHANNEL POWER MOSFET |
|
PMK30EP518Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
BSZ0905PNSATMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 40A TDSON-8 |
|
AUIRFP1405Rochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
DMN63D8L-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 350MA SOT23-3 |