CAP ALUM 0.22UF 20% 50V RADIAL
FIXED IND 22NH 300MA 600 MOHM
MOSFET N-CH 55V 27A DPAK
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55 V |
Current - Continuous Drain (Id) @ 25°C: | 27A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 45mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 34 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 700 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 68W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SPD01N60C3BTMA1Rochester Electronics |
MOSFET N-CH 650V 800MA TO252-3 |
|
RQ6P015SPTRROHM Semiconductor |
MOSFET P-CH 100V 1.5A TSMT6 |
|
IXTA120N04T2Wickmann / Littelfuse |
MOSFET N-CH 40V 120A TO263 |
|
TK290A60Y,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 11.5A TO220SIS |
|
RFD8P06LERochester Electronics |
P-CHANNEL POWER MOSFET |
|
SQD40N06-25L-GE3Vishay / Siliconix |
MOSFET N-CH 60V 30A TO252 |
|
TK50P04M1(T6RSS-Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 50A DP |
|
HUF75631S3STRochester Electronics |
MOSFET N-CH 100V 33A D2PAK |
|
2N7002WT1GRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
IPP120N04S302AKSA1Rochester Electronics |
PFET, 120A I(D), 40V, 0.0023OHM, |
|
BSS127S-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 600V 50MA SOT23 |
|
STF10N95K5STMicroelectronics |
MOSFET N-CH 950V 8A TO220FP |
|
ISZ0901NLSATMA1IR (Infineon Technologies) |
25V, N-CH MOSFET, LOGIC LEVEL, P |