English
简体中文
MOSFET N-CH 40V 120A TO263
Image is for reference, please contact us to get the real picture
| Type | Description |
|---|---|
| Series: | TrenchT2™ |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 40 V |
| Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 6.1mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 58 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 3240 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 200W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | TO-263 (IXTA) |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
TK290A60Y,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 11.5A TO220SIS |
|
RFD8P06LERochester Electronics |
P-CHANNEL POWER MOSFET |
|
SQD40N06-25L-GE3Vishay / Siliconix |
MOSFET N-CH 60V 30A TO252 |
|
TK50P04M1(T6RSS-Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 50A DP |
|
HUF75631S3STRochester Electronics |
MOSFET N-CH 100V 33A D2PAK |
|
2N7002WT1GRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
IPP120N04S302AKSA1Rochester Electronics |
PFET, 120A I(D), 40V, 0.0023OHM, |
|
BSS127S-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 600V 50MA SOT23 |
|
STF10N95K5STMicroelectronics |
MOSFET N-CH 950V 8A TO220FP |
|
ISZ0901NLSATMA1IR (Infineon Technologies) |
25V, N-CH MOSFET, LOGIC LEVEL, P |
|
SIHH11N65E-T1-GE3Vishay / Siliconix |
MOSFET N-CH 650V 12A PPAK 8 X 8 |
|
AO4485Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 40V 10A 8SOIC |
|
TSM60NB600CF C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 8A ITO220S |