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RD3L050SNTL1

RD3L050SNTL1

MOSFET N-CH 60V 5A TO252

IGS232

IGS232

INDUCTIVE SENSOR; M18 X 1 / L =

RD3L050SNTL1

RD3L050SNTL1

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Part No :

RD3L050SNTL1

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 60V 5A TO252
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10183 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
RD3L050SNTL1 PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:109mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:290 pF @ 10 V
FET Feature:-
Power Dissipation (Max):15W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
RD3L050SNTL1 is available at GangBo-ic.com, Please review product page below for detailed information, including RD3L050SNTL1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RD3L050SNTL1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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