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FDMA410NZT

FDMA410NZT

MOSFET N-CH 20V 9.5A 6MICROFET

GI501-E3/54

GI501-E3/54

DIODE GEN PURP 100V 3A DO201AD

FDMA410NZT

FDMA410NZT

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Part No :

FDMA410NZT

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 20V 9.5A 6MICROFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
5129000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
FDMA410NZT PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:23mOhm @ 9.5A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1310 pF @ 10 V
FET Feature:-
Power Dissipation (Max):2.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-MicroFET (2x2)
Package / Case:6-UDFN Exposed Pad
FDMA410NZT is available at GangBo-ic.com, Please review product page below for detailed information, including FDMA410NZT price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDMA410NZT to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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