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SUG90090E-GE3

SUG90090E-GE3

MOSFET N-CH 200V 100A TO247AC

SUG90090E-GE3

SUG90090E-GE3

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Part No :

SUG90090E-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 200V 100A TO247AC
Catalog
Transistors - FETs, MOSFETs - Single
Availability
303130 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 31 - Jan 04 2024
PDF
SUG90090E-GE3 PDF
Type Description
Series:ThunderFET®
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
Rds On (Max) @ Id, Vgs:9.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:129 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5220 pF @ 100 V
FET Feature:-
Power Dissipation (Max):395W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AC
Package / Case:TO-247-3
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