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IPI80N08S406AKSA1

IPI80N08S406AKSA1

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IPI80N08S406AKSA1

IPI80N08S406AKSA1

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Part No :

IPI80N08S406AKSA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 80V 80A TO262-3-1
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10235 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
IPI80N08S406AKSA1 PDF
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4.8 pF @ 25 V
FET Feature:-
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3-1
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
IPI80N08S406AKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPI80N08S406AKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPI80N08S406AKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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