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FQD7N10LTM

FQD7N10LTM

MOSFET N-CH 100V 5.8A DPAK

S-13R1F15-I4T1U3

S-13R1F15-I4T1U3

IC REG LINEAR 1.5V 150MA SNT4A

DS90CR216MTD-TI

DS90CR216MTD-TI

LINE RECEIVER, 4 FUNC, 4 RCVR, C

IDSD-13-D-40.00-G

IDSD-13-D-40.00-G

INSULATION DISPLACEMENT TERMINAL

FQD7N10LTM

FQD7N10LTM

Image is for reference, please contact us to get the real picture

Part No :

FQD7N10LTM

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 100V 5.8A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
36442500 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 07 - Nov 11 2025
PDF
FQD7N10LTM PDF
Type Description
Series:QFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:350mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:290 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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