MOSFET P-CH 200V 106A SOT227B
Type | Description |
---|---|
Series: | TrenchP™ |
Package: | Tube |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 106A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 30mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 740 nC @ 10 V |
Vgs (Max): | ±15V |
Input Capacitance (Ciss) (Max) @ Vds: | 73000 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 830W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Supplier Device Package: | SOT-227B |
Package / Case: | SOT-227-4, miniBLOC |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NDT03N40ZT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 500MA SOT223 |
|
STWA20N95DK5STMicroelectronics |
MOSFET N-CH 950V 18A TO247 |
|
IPI100N06S3L-03Rochester Electronics |
MOSFET N-CH 55V 100A TO262-3 |
|
AUIRFR5305TRIR (Infineon Technologies) |
MOSFET P-CH 55V 31A DPAK |
|
IPD034N06N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 100A TO252-3 |
|
AOD360A70Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 700V 12A TO252 |
|
VN0606L-G-P003Roving Networks / Microchip Technology |
MOSFET N-CH 60V 330MA TO92-3 |
|
IPB120N04S404ATMA1Rochester Electronics |
MOSFET N-CH 40V 120A D2PAK |
|
RD3L050SNTL1ROHM Semiconductor |
MOSFET N-CH 60V 5A TO252 |
|
AO3421Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 2.6A SOT23-3L |
|
FDMC7582Rochester Electronics |
MOSFET N-CH 25V 16.7A/49A PWR33 |
|
SUG90090E-GE3Vishay / Siliconix |
MOSFET N-CH 200V 100A TO247AC |
|
IXFX26N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 26A PLUS247-3 |