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IRFSL38N20DPBF

IRFSL38N20DPBF

MOSFET N-CH 200V 43A TO262

IRFSL38N20DPBF

IRFSL38N20DPBF

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Part No :

IRFSL38N20DPBF

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 200V 43A TO262
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 29 - Jan 02 2024
PDF
IRFSL38N20DPBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:43A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:54mOhm @ 26A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:91 nC @ 10 V
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:2.9 pF @ 25 V
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
IRFSL38N20DPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFSL38N20DPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFSL38N20DPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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