MOSFET P-CH 30V 6A POWERFLAT
Type | Description |
---|---|
Series: | STripFET™ H6 |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 30mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: | 12 nC @ 4.5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1450 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 2.9W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerFlat™ (3.3x3.3) |
Package / Case: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SSM3K339R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 2A SOT-23F |
|
AOWF12N65Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 12A TO262F |
|
DMG7N65SCTZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 650V 7.7A TO220AB |
|
FDB8445-F085Rochester Electronics |
MOSFET N-CH 40V 70A TO263AB |
|
NTTFS4945NTAGRochester Electronics |
MOSFET N-CH 30V 7.1A/34A 8WDFN |
|
FQD7N10LTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 5.8A DPAK |
|
IXTN120P20TWickmann / Littelfuse |
MOSFET P-CH 200V 106A SOT227B |
|
NDT03N40ZT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 500MA SOT223 |
|
STWA20N95DK5STMicroelectronics |
MOSFET N-CH 950V 18A TO247 |
|
IPI100N06S3L-03Rochester Electronics |
MOSFET N-CH 55V 100A TO262-3 |
|
AUIRFR5305TRIR (Infineon Technologies) |
MOSFET P-CH 55V 31A DPAK |
|
IPD034N06N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 100A TO252-3 |
|
AOD360A70Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 700V 12A TO252 |