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BSP318SH6327XTSA1

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INSULATION DISPLACEMENT TERMINAL

BSP318SH6327XTSA1

BSP318SH6327XTSA1

Image is for reference, please contact us to get the real picture

Part No :

BSP318SH6327XTSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 60V 2.6A SOT223-4
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12918 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 05 - Nov 09 2025
PDF
BSP318SH6327XTSA1 PDF
Type Description
Series:SIPMOS®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:2.6A (Tj)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:90mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id:2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:380 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-4
Package / Case:TO-261-4, TO-261AA
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