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TP65H300G4LSG

TP65H300G4LSG

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Part No :

TP65H300G4LSG

Manufacturer
Transphorm
Description
GANFET N-CH 650V 6.5A 3PQFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10240 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 01 - Nov 05 2025
Type Description
Series:-
Package:Tray
Part Status:Active
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V
Rds On (Max) @ Id, Vgs:312mOhm @ 5A, 8V
Vgs(th) (Max) @ Id:2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:9.6 nC @ 8 V
Vgs (Max):±18V
Input Capacitance (Ciss) (Max) @ Vds:760 pF @ 400 V
FET Feature:-
Power Dissipation (Max):21W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-PQFN (8x8)
Package / Case:3-PowerDFN
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