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TP65H300G4LSG

TP65H300G4LSG

GANFET N-CH 650V 6.5A 3PQFN

TP65H300G4LSG

TP65H300G4LSG

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Part No :

TP65H300G4LSG

Manufacturer
Transphorm
Description
GANFET N-CH 650V 6.5A 3PQFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10240 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 04 - Nov 08 2024
Type Description
Series:-
Package:Tray
Part Status:Active
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V
Rds On (Max) @ Id, Vgs:312mOhm @ 5A, 8V
Vgs(th) (Max) @ Id:2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:9.6 nC @ 8 V
Vgs (Max):±18V
Input Capacitance (Ciss) (Max) @ Vds:760 pF @ 400 V
FET Feature:-
Power Dissipation (Max):21W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-PQFN (8x8)
Package / Case:3-PowerDFN
TP65H300G4LSG is available at GangBo-ic.com, Please review product page below for detailed information, including TP65H300G4LSG price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for TP65H300G4LSG to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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