MOSFET N-CH 30V 75A I2PAK
Type | Description |
---|---|
Series: | UltraFET™ |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 3.2mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 172 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 7 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 215W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I2PAK (TO-262) |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RD3U080CNTL1ROHM Semiconductor |
MOSFET N-CH 250V 8A TO252 |
|
RQ6E035ATTCRROHM Semiconductor |
MOSFET P-CH 30V 3.5A TSMT6 |
|
IPB90N06S404ATMA2Rochester Electronics |
MOSFET N-CH 60V 90A D2PAK |
|
RTL020P02FRATRROHM Semiconductor |
MOSFET P-CH 20V 2A TUMT6 |
|
TP65H300G4LSGTransphorm |
GANFET N-CH 650V 6.5A 3PQFN |
|
IRFS3006-7PPBFRochester Electronics |
HEXFET N-CHANNEL POWER MOSFET |
|
FDB8870Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |
|
NX2301P,215Nexperia |
MOSFET P-CH 20V 2A TO236AB |
|
RTR025N03HZGTLROHM Semiconductor |
MOSFET N-CH 30V 2.5A TSMT3 |
|
IRFI4110GPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 72A TO220AB FP |
|
IRL60HS118IR (Infineon Technologies) |
MOSFET N-CH 60V 18.5A 6PQFN |
|
FDS2170N3Rochester Electronics |
MOSFET N-CH 200V 3A 8SOIC |
|
APT75M50LRoving Networks / Microchip Technology |
MOSFET N-CH 500V 75A TO264 |