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FDS2170N3

FDS2170N3

MOSFET N-CH 200V 3A 8SOIC

H65AC,GY

H65AC,GY

BOX ABS GRAY 4.94"L X 2.75"W

FDS2170N3

FDS2170N3

Image is for reference, please contact us to get the real picture

Part No :

FDS2170N3

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 200V 3A 8SOIC
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12617 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
FDS2170N3 PDF
Type Description
Series:PowerTrench®
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:128mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.292 pF @ 100 V
FET Feature:-
Power Dissipation (Max):3W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
FDS2170N3 is available at GangBo-ic.com, Please review product page below for detailed information, including FDS2170N3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDS2170N3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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