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IPP030N10N3GXKSA1

IPP030N10N3GXKSA1

MOSFET N-CH 100V 100A TO220-3

IPP030N10N3GXKSA1

IPP030N10N3GXKSA1

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Part No :

IPP030N10N3GXKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 100A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
IPP030N10N3GXKSA1 PDF
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.5V @ 275µA
Gate Charge (Qg) (Max) @ Vgs:206 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:14800 pF @ 50 V
FET Feature:-
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
IPP030N10N3GXKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPP030N10N3GXKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPP030N10N3GXKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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