FIXED IND 2.2UH 2.47A 50 MOHM
FUSE BRD MNT 2.5A 125VAC/VDC SMD
MOSFET N-CH 30V 7.2A/22A 6DFN
TAPE DBL COAT 9/16" DIA 2000/RL
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 7.2A (Ta), 22A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 22mOhm @ 7.2A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 14 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 440 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 2W (Ta), 19W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DFN2020MD-6 |
Package / Case: | 6-UDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SPP80N06S08AKSA1Rochester Electronics |
MOSFET N-CH 55V 80A TO220-3 |
|
STFU28N65M2STMicroelectronics |
MOSFET N-CH 650V 20A TO220FP |
|
IPB80R290C3AATMA2Rochester Electronics |
IPB80R290 - OPTLMOS N-CHANNEL |
|
FCPF11N60FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 11A TO220F |
|
MCU30N02-TPMicro Commercial Components (MCC) |
MOSFET N-CH 20V 30A DPAK |
|
FDS4672ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 11A 8SOIC |
|
IPP60R950C6XKSA1Rochester Electronics |
MOSFET N-CH 600V 4.4A TO220-3 |
|
IRFS7762TRLPBFRochester Electronics |
MOSFET N-CH 75V 85A D2PAK |
|
TK7P65W,RQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 6.8A DPAK |
|
FCPF7N60NTSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 6.8A TO220F |
|
RQ3E180AJTBROHM Semiconductor |
MOSFET N-CH 30V 18A/30A 8HSMT |
|
NP80N055PDG-E1B-AYRochester Electronics |
MOSFET N-CH 55V 80A TO263 |
|
SQS481ENW-T1_GE3Vishay / Siliconix |
MOSFET P-CH 150V 4.7A PPAK1212-8 |