MOSFET N-CH 40V 11A 8SOIC
Type | Description |
---|---|
Series: | PowerTrench® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V |
Rds On (Max) @ Id, Vgs: | 13mOhm @ 11A, 4.5V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 49 nC @ 4.5 V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 4766 pF @ 20 V |
FET Feature: | - |
Power Dissipation (Max): | 2.5W (Ta) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPP60R950C6XKSA1Rochester Electronics |
MOSFET N-CH 600V 4.4A TO220-3 |
|
IRFS7762TRLPBFRochester Electronics |
MOSFET N-CH 75V 85A D2PAK |
|
TK7P65W,RQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 6.8A DPAK |
|
FCPF7N60NTSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 6.8A TO220F |
|
RQ3E180AJTBROHM Semiconductor |
MOSFET N-CH 30V 18A/30A 8HSMT |
|
NP80N055PDG-E1B-AYRochester Electronics |
MOSFET N-CH 55V 80A TO263 |
|
SQS481ENW-T1_GE3Vishay / Siliconix |
MOSFET P-CH 150V 4.7A PPAK1212-8 |
|
IXTK150N15PWickmann / Littelfuse |
MOSFET N-CH 150V 150A TO264 |
|
IRFL4105PBFRochester Electronics |
MOSFET N-CH 55V 3.7A SOT223 |
|
SSM3K341TU,LXHFToshiba Electronic Devices and Storage Corporation |
AECQ MOSFET NCH 60V 6A SOT323F |
|
IRF510STRLPBFVishay / Siliconix |
MOSFET N-CH 100V 5.6A D2PAK |
|
BSC190N15NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 150V 50A TDSON-8-1 |
|
IAUA200N04S5N010AUMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 200A 5HSOF |