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RQ3E180AJTB

RQ3E180AJTB

MOSFET N-CH 30V 18A/30A 8HSMT

RQ3E180AJTB

RQ3E180AJTB

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Part No :

RQ3E180AJTB

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 30V 18A/30A 8HSMT
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
RQ3E180AJTB PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:18A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:4.5mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 11mA
Gate Charge (Qg) (Max) @ Vgs:39 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:4290 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2W (Ta), 30W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HSMT (3.2x3)
Package / Case:8-PowerVDFN
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