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SQS481ENW-T1_GE3

SQS481ENW-T1_GE3

MOSFET P-CH 150V 4.7A PPAK1212-8

SQS481ENW-T1_GE3

SQS481ENW-T1_GE3

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Part No :

SQS481ENW-T1_GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 150V 4.7A PPAK1212-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14096 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
SQS481ENW-T1_GE3 PDF
Type Description
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.095Ohm @ 5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:385 pF @ 75 V
FET Feature:-
Power Dissipation (Max):62.5W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8
Package / Case:PowerPAK® 1212-8
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