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SPP15P10PLHXKSA1

SPP15P10PLHXKSA1

MOSFET P-CH 100V 15A TO220-3

EDM1IMX6SPR05E04BB

EDM1IMX6SPR05E04BB

MODULE EDM COMPACT TYPE 1

SPP15P10PLHXKSA1

SPP15P10PLHXKSA1

Image is for reference, please contact us to get the real picture

Part No :

SPP15P10PLHXKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 100V 15A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
452445 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
SPP15P10PLHXKSA1 PDF
Type Description
Series:SIPMOS®
Package:Tube
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:200mOhm @ 11.3A, 10V
Vgs(th) (Max) @ Id:2V @ 1.54mA
Gate Charge (Qg) (Max) @ Vgs:62 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1490 pF @ 25 V
FET Feature:-
Power Dissipation (Max):128W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
SPP15P10PLHXKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including SPP15P10PLHXKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SPP15P10PLHXKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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