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FQAF5N90

FQAF5N90

MOSFET N-CH 900V 4.1A TO3PF

FQAF5N90

FQAF5N90

Image is for reference, please contact us to get the real picture

Part No :

FQAF5N90

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 900V 4.1A TO3PF
Catalog
Transistors - FETs, MOSFETs - Single
Availability
572457 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 20 - May 24 2024
PDF
FQAF5N90 PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.3Ohm @ 2.05A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1.55 pF @ 25 V
FET Feature:-
Power Dissipation (Max):90W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PF
Package / Case:TO-3P-3 Full Pack
FQAF5N90 is available at GangBo-ic.com, Please review product page below for detailed information, including FQAF5N90 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQAF5N90 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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