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FCD850N80Z

FCD850N80Z

MOSFET N-CH 800V 6A DPAK

FCD850N80Z

FCD850N80Z

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Part No :

FCD850N80Z

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 800V 6A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14990 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 28 - Jan 01 2024
PDF
FCD850N80Z PDF
Type Description
Series:SuperFET® II
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:850mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1315 pF @ 100 V
FET Feature:-
Power Dissipation (Max):75W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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