N-CHANNEL POWER MOSFET
Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
FET Type: | - |
Technology: | - |
Drain to Source Voltage (Vdss): | - |
Current - Continuous Drain (Id) @ 25°C: | - |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | - |
Supplier Device Package: | - |
Package / Case: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RTQ020N05TRROHM Semiconductor |
MOSFET N-CH 45V 2A TSMT6 |
|
PSMN3R5-40YSDXNexperia |
MOSFET N-CH 40V 120A LFPAK56 |
|
IRFSL7434PBFRochester Electronics |
MOSFET N-CH 40V 195A TO262 |
|
IRF341Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPS65R1K4C6AKMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 3.2A TO251-3 |
|
FDS6675BZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 11A 8SOIC |
|
IPP60R600P6XKSA1Rochester Electronics |
MOSFET N-CH 600V 7.3A TO220-3 |
|
FCD850N80ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 6A DPAK |
|
SQ3457EV-T1_GE3Vishay / Siliconix |
MOSFET P-CHANNEL 30V 6.8A 6TSOP |
|
FQAF5N90Rochester Electronics |
MOSFET N-CH 900V 4.1A TO3PF |
|
STW15N80K5STMicroelectronics |
MOSFET N-CH 800V 14A TO247 |
|
FDD14AN06LA0-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 9.5A/50A TO252AA |
|
DMP2070UCB6-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 2.5A U-WLB1510-6 |