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SQ2301ES-T1_GE3

SQ2301ES-T1_GE3

MOSFET P-CH 20V 3.9A TO236

SQ2301ES-T1_GE3

SQ2301ES-T1_GE3

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Part No :

SQ2301ES-T1_GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 20V 3.9A TO236
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10541 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
SQ2301ES-T1_GE3 PDF
Type Description
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:120mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:425 pF @ 10 V
FET Feature:-
Power Dissipation (Max):3W (Tc)
Operating Temperature:-55°C ~ 175°C (TA)
Mounting Type:Surface Mount
Supplier Device Package:TO-236 (SOT-23)
Package / Case:TO-236-3, SC-59, SOT-23-3
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