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IRF7488TRPBF

IRF7488TRPBF

POWER FIELD-EFFECT TRANSISTOR, 6

IRF7488TRPBF

IRF7488TRPBF

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Part No :

IRF7488TRPBF

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, 6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11200 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 19 - Jun 23 2024
PDF
IRF7488TRPBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:6.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:29mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:57 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.68 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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