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FQD6P25TF

FQD6P25TF

MOSFET P-CH 250V 4.7A DPAK

PBA-1

PBA-1

PHOTO SEN PWR BLK EMITTER

FQD6P25TF

FQD6P25TF

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Part No :

FQD6P25TF

Manufacturer
Rochester Electronics
Description
MOSFET P-CH 250V 4.7A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
137000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 06 - Nov 10 2024
PDF
FQD6P25TF PDF
Type Description
Series:QFET®
Package:Bulk
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.1Ohm @ 2.35A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:780 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 55W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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