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SIA485DJ-T1-GE3

SIA485DJ-T1-GE3

MOSFET P-CH 150V 1.6A PPAK SC70

SIA485DJ-T1-GE3

SIA485DJ-T1-GE3

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Part No :

SIA485DJ-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 150V 1.6A PPAK SC70
Catalog
Transistors - FETs, MOSFETs - Single
Availability
16799 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 27 - Dec 31 2024
PDF
SIA485DJ-T1-GE3 PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:155 pF @ 75 V
FET Feature:-
Power Dissipation (Max):15.6W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SC-70-6 Single
Package / Case:PowerPAK® SC-70-6
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